Description
MOSFET 6N-CH 100V 210A V2 Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25~C: 210A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) @ Vgs: 430nC @ 10V Input Capacitance (Ciss) @ Vds: - Power - Max: - Operating Temperature: -40~C ~ 175~C (TJ) Mounting Type: Through Hole Package / Case: V2-PAK Supplier Device Package: V2-PAK
Part Number | VWM200-01P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | IXYS |
Description | MOSFET 6N-CH 100V 210A V2 |
Series | - |
Packaging | Bulk |
FET Type | 6 N-Channel (3-Phase Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 210A |
Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | V2-PAK |
Supplier Device Package | V2-PAK |
Image |
VWM200-01P
IXYSRF
8000
0.87
MY Group (Asia) Limited
VWM200-01P
IXYSCLARE
5
1.93
Foston Technology Co., Limited