Description
Datasheet 2010 IXYS CORPORATION, All Rights Reserved. Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25 C to 175 C. 40. V. VDGR. TJ. = 25 C to 175 C , MMIX1T600N04T2 . MMIX1T550N055T2. MMIX1F520N075T2. MMIX1F360N15T2. MMIX1F420N10T. MMIX1F230N20T. MMIX1F180N25T. MMIX1F160N30T. MMIX1T600N04T2 . 40V. 600A. 1.30. 590. 100. MMIX1F520N075T2. 75V. 500A. 1.60. 545. 150. Table 2: Latest SMPD Packaged IGBT. IGBT. (max). DS. V. V .).
Part Number | MMIX1T600N04T2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 40V 600A SMPD |
Series | FRFET, SupreMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 590nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 40000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 830W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SMPD |
Package / Case | 24-PowerSMD, 21 Leads |
Image |
MMIX1T600N04T2
IXYSRF
1000
0.22
MY Group (Asia) Limited
MMIX1T600N04T2
IXYSCLARE
500
1.3075
North Star Technology (HK) Co.,Ltd
MMIX1T132N50P3
IXYSCORPORATION
18000
2.395
MY Group (Asia) Limited
MMIX1T550N055T2
IXYS()
22022
3.4825
HongKong Wanghua Technology Limited
MMIX1T132N50P3
IXYS/LEADIS
500
4.57
North Star Technology (HK) Co.,Ltd