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Description
IXTY1R6N50D2 IXTA1R6N50D2. IXTP1R6N50D2. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Symbol. Test Conditions. Characteristic Values. (TJ = 25 C, Unless Otherwise Specified). Min. Typ. Max. gfs. Apr 11, 2016 Texas Instruments and/or its licensors do not warrant the accuracy or completeness of this specification or any information contained therein. Texas Instruments and/or its licensors do not warrant that this design will meet the IXTP1R6N50D2. 500. 1.6. 2.3. -4.0. TO-220. IXTY1R6N50D2 . 500. 1.6. 2.3. -4.0. TO-252. IXTA08N50D2. 500. 0.8. 4.6. -4.0. TO-263. IXTP08N50D2. 500. 0.8. 4.6. -4.0. TO-220. IXTY08N50D2. 500. 0.8. 4.6. -4.0. TO-252. IXTA02N100D2. 1000.
| Part Number | IXTY1R6N50D2 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | IXYS |
| Description | MOSFET N-CH 500V 1.6A DPAK |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 23.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 100W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 800mA, 0V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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