Description
IXTY12N06T TRL. RECOMMEND REPLACEMENT: CONTACT FACTORY. REASON FOR DISCONTINUATION: OBSOLETE TECHNOLOGY AND LACK OF DEMAND FOR PRODUCT. LAST TIME ORDER DATE: CONTACT THE FACTORY. LAST TIME DELIVERY DATE: CONTACT THE FACTORY. INTERNAL REFERENCE IXYS IXTY12N06T Power MOSFET. The purpose of the power MOSFET in circuit is to serve as a blocking mechanism. It prevents the battery from discharging back through the solar cells when the output voltage from the solar cells is lower than the battery, such as during low light conditions and night time hours. While the
Part Number | IXTY12N06T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 60V 12A TO-252 |
Series | TrenchMV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 256pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 33W (Tc) |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IXTY12N06T
IXYSRF
62000
0.06
N&S Electronic Co., Limited
IXTY12N06T**
IXYSCLARE
48800
0.625
Ande Electronics Co., Limited
IXTY12N06T
IXYSCORPORATION
16000
1.19
Finestock Electronics HK Limited
IXTY12N06T
IXYS()
54700
1.755
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IXTY12N06T
IXYS/LEADIS
5733
2.32
Dedicate Electronics (HK) Limited