Part Number | IXTU08N100P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1000V 8A TO-251 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | - |
Operating Temperature | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-251 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
IXTU08N100P
IXYSRF
1931
1
Hong Kong In Fortune Electronics Co., Limited
IXTU08N100P
IXYSCLARE
3919
2.025
Wide Key International Limited
IXTU08N100P
IXYSCORPORATION
4694
3.05
Bonase Electronics (HK) Co., Limited
IXTU08N100P
IXYS()
3805
4.075
MY Group (Asia) Limited
IXTU08N100P
IXYS/LEADIS
6499
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Inchange Semiconductor Company Limited