Part Number | IXTQ86N20T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 200V 86A TO-3P |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 480W (Tc) |
Rds On (Max) @ Id, Vgs | 29 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
IXTQ86N20T
IXYSRF
13101
0.56
HongKong Wanghua Technology Limited
IXTQ86N20T
IXYSCLARE
30300
1.6325
MASSTOCK ELECTRONICS LIMITED
IXTQ86N20T
IXYSCORPORATION
5000
2.705
USA R&K Holdings Group Co. Limited.
IXTQ86N20T
IXYS()
5000
3.7775
Inchange Semiconductor Company Limited
IXTQ86N20T
IXYS/LEADIS
500
4.85
North Star Technology (HK) Co.,Ltd