Part Number | IXTQ30N60L2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 600V 30A TO-3P |
Series | Linear L2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 335nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 540W (Tc) |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
IXTQ30N60L2
IXYSRF
1000
0.19
MY Group (Asia) Limited
IXTQ30N60L2
IXYSCLARE
16427
0.415
HongKong Wanghua Technology Limited
IXTQ30N60L2
IXYSCORPORATION
5000
0.64
Inchange Semiconductor Company Limited
IXTQ30N60L2
IXYS()
500
0.865
North Star Technology (HK) Co.,Ltd
IXTQ30N50P
IXYS/LEADIS
2365
1.09
Xinye International Technology Limited