Part Number | IXTQ30N50P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 500V 30A TO-3P |
Series | PolarHV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4150pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 460W (Tc) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
IXTQ30N50P
IXYSRF
2365
0.53
Xinye International Technology Limited
IXTQ30N50P
IXYSCLARE
6340
2.0925
Gallop Great Holdings (Hong Kong) Limited
IXTQ30N50P
IXYSCORPORATION
500000
3.655
VBsemi Electronics Co., Limited
IXTQ30N50P
IXYS()
200000
5.2175
Shenzhen WTX Capacitor Co., Ltd.
IXTQ30N50P
IXYS/LEADIS
23334
6.78
Hong Kong H.D.W Trading Co., Limited