Part Number | IXTQ200N06P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 60V 200A TO-3P |
Series | PolarHT |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 714W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 400A, 15V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
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