Description
IXTQ18N60P, IXYS, TO-3P-3, SC-65-3, MOSFET N-CH 600V 18A TO-3P, Discrete Semiconductor Products, FETs - Single
Part Number | IXTQ18N60P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 600V 18A TO-3P |
Series | PolarHV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 360W (Tc) |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
IXTQ18N60P
IXYSRF
17230
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N&S Electronic Co., Limited
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IXYSCLARE
200000
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Shenzhen WTX Capacitor Co., Ltd.
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IXYSCORPORATION
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Finestock Electronics HK Limited
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4.6625
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87500
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OCEANIA INTERNATIONAL INDUSTRIAL LIMITED