Part Number | IXTQ180N085T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 85V 180A TO-3P |
Series | TrenchMV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 85V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 430W (Tc) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |
Image |
IXTQ180N085T
IXYSRF
1320
0.76
KELAN (HK) INTERNATIONAL ELECTRONICS CO.,LIMITED
IXTQ180N085T
IXYSCLARE
1000
1.7325
MY Group (Asia) Limited
IXTQ180N085T
IXYSCORPORATION
5825
2.705
Dedicate Electronics (HK) Limited
IXTQ180N085T
IXYS()
12200
3.6775
N&S Electronic Co., Limited
IXTQ180N085T
IXYS/LEADIS
9342
4.65
Viassion Technology Co., Limited