Part Number | IXTP8N65X2M |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 650V 4A X2 TO-220 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 32W (Tc) |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
IXTP8N65X2M
IXYSRF
5839
0.07
Dedicate Electronics (HK) Limited
IXTP8N65X2M
IXYSCLARE
18000
0.7525
MY Group (Asia) Limited
IXTP8N65X2M
IXYSCORPORATION
50
1.435
Transfer Multisort Elektronik Sp. z o.o.
IXTP8N65X2M
IXYS()
500
2.1175
North Star Technology (HK) Co.,Ltd
IXTP8N50P
IXYS/LEADIS
3654
2.8
Xinye International Technology Limited