Description
rated. Low package inductance. - easy to drive and to protect. Advantages. Easy to mount. Space savings. High power density. IXTA50N20P. IXTP50N20P .
Part Number | IXTP50N20P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 200V 50A TO-220 |
Series | PolarHT |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2720pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 360W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IXTP50N20P
IXYSRF
1250
1.08
Yingxinyuan INT'L (Group) Limited
IXTP50N20P MOS
IXYSCLARE
15688
1.705
Ysx Tech Co., Limited
IXTP50N20P
IXYSCORPORATION
1258
2.33
Xinye International Technology Limited
IXTP50N20P
IXYS()
4187
2.955
Belt (HK) Electronics Co
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IXYS/LEADIS
1030
3.58
CIS Ltd (CHECK IC SOLUTION LIMITED)