Description
DATASHEET 336 IXTP182N055T . SS1003. 44. 125. 1000. 30. 0. 30000. 337 IXTP1N80P. SS0908. 640. 125. 1000. 30. 0. 30000. 338 IXTP200N055T2. SS0847. 44. 125. 176 IXTP182N055T . SS1003. 42. 130. 85. 96. 30. 0. 2880. 177 IXTP1N80P. SS0908. 42. 130. 85. 96. 30. 0. 2880. 178 IXTP200N055T2. US1310. 42. 130. 85.
Part Number | IXTP182N055T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 55V 182A TO-220 |
Series | TrenchMV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 182A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4850pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 360W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IXTP182N055T
IXYSRF
10004
1.7
Ande Electronics Co., Limited
IXTP182N055T
IXYSCLARE
1722
2.9225
LYT (HONGKONG) CO., LIMITED
IXTP182N055T
IXYSCORPORATION
23770
4.145
N&S Electronic Co., Limited
IXTP182N055T
IXYS()
200000
5.3675
Shenzhen WTX Capacitor Co., Ltd.
IXTP182N055T
IXYS/LEADIS
100
6.59
RX ELECTRONICS LIMITED