Part Number | IXTP110N055T2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 55V 110A TO-220 |
Series | TrenchT2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3060pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Rds On (Max) @ Id, Vgs | 6.6 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IXTP110N055T2
IXYSRF
18000
0.49
MY Group (Asia) Limited
IXTP110N055T2
IXYSCLARE
3638
1.8725
Belt (HK) Electronics Co
IXTP110N055T2 IXTP110N055
IXYSCORPORATION
13650
3.255
Ande Electronics Co., Limited
IXTP110N055T2
IXYS()
200000
4.6375
Shenzhen WTX Capacitor Co., Ltd.
IXTP110N055T2
IXYS/LEADIS
29731
6.02
MASSTOCK ELECTRONICS LIMITED