(4/5) based on 14 customer reviews
Description
DATASHEET IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXTP02N120P . IXTY02N120P. Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS MOSFETs and IGBTs are covered. 4,835,592. 4,931,844. 5,049,961. TP1239. 3000. 90. 1000. 30. 0. 30000. 178 IXTN15N100. 2819. 800. 150. 1000. 80. 0. 80000. 179 IXTP02N120P . TS1307. 960. 125. 1000. 30. 0. 30000. 180 IXTP02N120P . TS1307. 960. 125. 1000. 30. 0. 30000. 181 IXTP100N04T2. SS1341.
| Part Number | IXTP02N120P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | IXYS |
| Description | MOSFET N-CH 1200V 0.2A TO-220 |
| Series | Polar |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 104pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Rds On (Max) @ Id, Vgs | 75 Ohm @ 100mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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