(5/5) based on 18 customer reviews
Description
1.3/11.5. Nm/lb.in. Weight. 30 g. LinearTM Power MOSFET w/ Extended FBSOA. N-Channel Enhancement Mode. Avalanche Rated. IXTN30N100L . V. DSS. RDS(on). VGS = 20 V, ID = 0.5 ID25. 0.45. . Note 1. Linear Power MOSFET. With Extended FBSOA. IXTN30N100L . V. DSS. = 1000 V. I. D25. = 30 A. R. DS( on). IXTN30N100L 1000. 30. 0.156. 300. @ Vds = 600V, Id = 0.5A. SOT-227B. IXTB30N100L 1000. 30. 0.156. 300. @ Vds = 600V, Id = 0.5A. PLUS264. Based on IXTN30N100L . 1000 30. 0.156 300 at VDS = 600 V, ID = 0.5 A. SOT-227B. Table 1. Select n-channel power MOSFETs with extended FBSOA . rating is normally
| Part Number | IXTN30N100L |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | IXYS |
| Description | MOSFET N-CH 1000V 30A SOT-227 |
| Series | - |
| Packaging | Bulk |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 545nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13700pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 800W (Tc) |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 15A, 20V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC |
| Image |  |
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