Description
Datasheet 71 IXTK80N25 . SS 0347. 200. 125. 1000. 30. 0. 30000. 72 IXTK82N25P. SS 0403. 200. 125. 1000. 30. 0. 30000. 73 IXTK88N30P. SS 0403. 240. 125. 1000. 30. 14 IXTK80N25 . IX81. -65. 150. 500. 30. 0. 15000 -65, 150 C / 10min. TABLE 4B: MOSFET/IGBT Module. Date Code. Low. High. Number. # Part Number or.
Part Number | IXTK80N25 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 250V 80A TO-264 |
Series | MegaMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 540W (Tc) |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264 (IXTK) |
Package / Case | TO-264-3, TO-264AA |
Image |
IXTK80N25
IXYSRF
50
1.84
Jinmingsheng Technology (HK) Co.,Limited
IXTK80N25
IXYSCLARE
7406
3.38
CHIPSMALL LIMITED
IXTK80N25
IXYSCORPORATION
200000
4.92
Jealasentec(HK) Semiconductors Co.,Limited