(5/5) based on 12 customer reviews
Description
Jun 19, 2008 2012 IXYS CORPORATION,All Rights Reserved. N-Channel Enhancement Mode . Avalanche Rated. IXTK180N15P . V. DSS. = 150V. I. D25. 2005 IXYS All rights reserved. Symbol. Test Conditions. Characteristic Values. ( TJ = 25 C, unless otherwise specified). Min. Typ. Max. BVDSS. VGS = 0 V, ID 113 IXTK180N15P . SP0552. 120. 125. 1000. 30. 0. 30000. 114 IXTK34N80. SP0546. 640. 125. 1000. 30. 0. 30000. 115 IXTK34N80. SP0603. 640. 125. 1000. 173 IXTK180N15P . SP0552. 120. 125. 1000. 30. 0. 30000. 174 IXTK250N10. SP0721. 80. 125. 1000. 30. 0. 30000. 175 IXTK34N80. SP0546. 640. 125. 1000.
| Part Number | IXTK180N15P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | IXYS |
| Description | MOSFET N-CH 150V 180A TO-264 |
| Series | PolarHT |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 800W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 90A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264 (IXTK) |
| Package / Case | TO-264-3, TO-264AA |
| Image |  |
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