Part Number | IXTK17N120L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1200V 17A TO-264 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 155nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 8300pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 8.5A, 20V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264 (IXTK) |
Package / Case | TO-264-3, TO-264AA |
Image |
IXTK17N120L
IXYSRF
10001
0.59
Ande Electronics Co., Limited
IXTK17N120L
IXYSCLARE
16000
1.535
Finestock Electronics HK Limited
IXTK17N120L
IXYSCORPORATION
10000
2.48
ShenZhen ShunDa Elcetronic Company
IXTK17N120L
IXYS()
11355
3.425
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
IXTK17N120L
IXYS/LEADIS
5956
4.37
Dedicate Electronics (HK) Limited