Description
VGS = -10V, ID = 0.5 ID25, Note 1. 10 m . TrenchPTM. Power MOSFETs. P- Channel Enhancement Mode. Avalanche Rated. IXTT140P10T. IXTH140P10T . V . 296 IXTH140P10T . SP1130. -80. 125. 1000. 30. 0. 30000. 297 IXTH15N50L2. TK0837. 400. 125. 1000. 30. 0. 30000. 298 IXTH1N80P. TP0905. 640. 125. 1000. 158 IXTH140P10T . SP1130. -80. 125. 1000. 30. 0. 30000. 159 IXTH16P60P. TS1316. -480. 125. 1000. 30. 0. 30000. 160 IXTH1N200P3. TP1338. 960. 125.
Part Number | IXTH140P10T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET P-CH 100V 140A TO-247 |
Series | TrenchP |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 400nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 31400pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 568W (Tc) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 70A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) |
Package / Case | TO-247-3 |
Image |
IXTH140P10T
IXYSRF
1000
0.03
MY Group (Asia) Limited
IXTH140P10T
IXYSCLARE
500
1.0525
North Star Technology (HK) Co.,Ltd
IXTH14N100
IXYSCORPORATION
2365
2.075
Xinye International Technology Limited
IXTH140P05T
IXYS()
1020
3.0975
CIS Ltd (CHECK IC SOLUTION LIMITED)
IXTH14N100
IXYS/LEADIS
1000
4.12
MY Group (Asia) Limited