Part Number | IXTA110N055P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 55V 110A TO-263 |
Series | PolarHT |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2210pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 390W (Tc) |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (IXTA) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IXTA110N055P
IXYSRF
1258
0.34
Xinye International Technology Limited
IXTA110N055P
IXYSCLARE
5000
1.635
HITO TECHNOLOGY LIMITED
IXTA110N055P
IXYSCORPORATION
220360
2.93
Cinty Int'l (HK) Industry Co., Limited
IXTA110N055P
IXYS()
1000
4.225
MY Group (Asia) Limited
IXTA110N055P
IXYS/LEADIS
18000
5.52
Bonase Electronics (HK) Co., Limited