Part Number | IXT-1-1N100S1-TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1000V 1.5A 8-SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | - |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC |
Image |
IXT-1-1N100S1-TR
IXYSRF
10001
0.57
Ande Electronics Co., Limited
IXT-1-1N100S1-TR
IXYSCLARE
5000
1.655
HITO TECHNOLOGY LIMITED
IXT-1-1N100S1-TR
IXYSCORPORATION
6166
2.74
Dedicate Electronics (HK) Limited
IXT11N100S1T/R
IXYS()
6167
3.825
Dedicate Electronics (HK) Limited
IXT-1-1N100S1-TR
IXYS/LEADIS
9000
4.91
YO CHIP(HONG KONG)TRADING CO LIMITED