Part Number | IXKN75N60C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 600V 75A SOT-227B |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 75A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 500nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | Super Junction |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 50A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Image |
IXKN75N60C
IXYSRF
5000
0.55
HITO TECHNOLOGY LIMITED
IXKN75N60C
IXYSCLARE
12010
1.78
N&S Electronic Co., Limited
IXKN75N60C
IXYSCORPORATION
1000
3.01
Hong Kong Lakes Electronics Co., Limited
IXKN75N60C
IXYS()
138
4.24
Wanzhong Mechanical & Electrical Equipment (China HK) Limited
IXKN75N60C
IXYS/LEADIS
2000
5.47
Bonase Electronics (HK) Co., Limited