Description
IXGF25N250 . DS99829B(05/09). Symbol. Test Conditions. Maximum Ratings. VCES. TJ. = 25 C to 150 C. 2500. V. VCGR. TJ. = 25 C to 150 C, RGE = 1M . IXGF25N250 . 1 = Gate. 5 = Collector. 2 = Emitter. DS99829A(04/08). Symbol. Test Conditions. Maximum Ratings. VCES. TJ. = 25 C to 150 C. 2500. V. VCGR. 149 IXGF25N250 . TP1206. 100. 10000. 17. 0. 170000. 150 IXGH100N30C3. SS1250. 100. 15000. 24. 0. 360000. 151 IXGH2N250. TP1010. 100. 10000. 24. 0 .
Part Number | IXGF25N250 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | IXYS |
Description | IGBT 2500V 30A 114W I4-PAK |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 2500V |
Current - Collector (Ic) (Max) | 30A |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 5.2V @ 15V, 75A |
Power - Max | 114W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 75nC |
Td (on/off) @ 25°C | - |
Test Condition | - |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | i4-Pac,5 (3 leads) |
Supplier Device Package | ISOPLUS i4-PAC |
Image |
IXGF25N250
IXYSRF
19
0.34
JFJ Electronics Co.,Limited
IXGF25N250
IXYSCLARE
5000
0.74
JFJ Electronics Co.,Limited
IXGF25N250
IXYSCORPORATION
12160
1.14
N&S Electronic Co., Limited
IXGF25N250
IXYS()
1210
1.54
ALLCHIPS ELECTRONICS LIMITED
IXGF25N250
IXYS/LEADIS
160
1.94
RX ELECTRONICS LIMITED