Part Number | IXFX120N65X2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 650V 120A PLUS247 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 15500pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 1250W (Tc) |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 60A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS247,3 |
Package / Case | TO-247-3 |
Image |
Hot Offer
IXFX120N65X2
IXYSRF
28
0.49
Shenzhen Yuanxinai E-commerce Co., Ltd
IXFX120N65X2
IXYSCLARE
11012
1.2525
CIS Ltd (CHECK IC SOLUTION LIMITED)
IXFX120N65X2
IXYSCORPORATION
12012
2.015
N&S Electronic Co., Limited
IXFX120N65X2
IXYS()
27000
2.7775
ICSME TECHNOLOGY LIMITED
IXFX120N65X2
IXYS/LEADIS
225800
3.54
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED