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Description
Datasheet IXYS Corporation; 3540 Bassett Street; Santa Clara, CA 95054; Tel: 408-982- 0700; Fax: 408-496- Size 9 MOSFET IXFN80N50 (rated at Id = 80 Amps and. IXYS Corporation. Santa Clara, CA 95054. IXAN0009 .. boosted up to 14 Amps by IXD_414 to drive a Size. 9 MOSFET IXFN80N50 (rated at Id = 80 Amps and. IXYS reserves the right to change limits, test conditions and dimensions. Contents Edition 2008. Published by IXYS Semiconductor GmbH .. IXFN80N50 . IXYS is committed to setting a new standard for excellence in power devices is provided on pages www. ixys .com. RELIABILITY 11 IXFN80N50 . 693. -40. IXYS is committed to setting a new standard for excellence in power devices is provided on www. ixys .com. RELIABILITY .. 132 IXFN80N50 . SF0836. 400.
| Part Number | IXFN80N50 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | IXYS |
| Description | MOSFET N-CH 500V 80A SOT-227B |
| Series | HiPerFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 80A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 380nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9890pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 500mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC |
| Image |  |
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