Part Number | IXFN36N110P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1100V 36A SOT-227B |
Series | Polar |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1100V (1.1kV) |
Current - Continuous Drain (Id) @ 25°C | 36A |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1000W (Tc) |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Image |
IXFN36N110P
IXYSRF
1000
0.9
Hong Kong Lakes Electronics Co., Limited
IXFN36N110P
IXYSCLARE
16000
1.7825
Finestock Electronics HK Limited
IXFN36N110P
IXYSCORPORATION
111
2.665
Wanzhong Mechanical & Electrical Equipment (China HK) Limited
IXFN36N110P
IXYS()
1000
3.5475
Bonase Electronics (HK) Co., Limited
IXFN36N110P
IXYS/LEADIS
5410
4.43
Dedicate Electronics (HK) Limited