Description
TJ = 25OC. IXFK27N80. IXFN27N80 . TJ = 125oC. VGS = 9V. 8V. 7V. 6V. TJ = 125OC. IXF_25N80. ID = 13.5A. Figure 3. RDS(on) normalized to 0.5 ID25 value.
Part Number | IXFN27N80Q |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 800V 27A SOT-227B |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 27A |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 520W (Tc) |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Image |
IXFN27N80Q
IXYSRF
74
0.61
FLOWER GROUP(HK)CO.,LTD
IXFN27N80Q
IXYSCLARE
18000
1.8725
Bonase Electronics (HK) Co., Limited
IXFN27N80Q
IXYSCORPORATION
16000
3.135
Finestock Electronics HK Limited
IXFN27N80Q
IXYS()
10000
4.3975
ShenZhen ShunDa Elcetronic Company
IXFN27N80Q
IXYS/LEADIS
11355
5.66
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED