Part Number | IXFN120N65X2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 650V 108A SOT-227 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 15500pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 890W (Tc) |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 54A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227 |
Package / Case | SOT-227-4, miniBLOC |
Image |
IXFN120N65X2
IXYSRF
945
0.4
Hong Kong In Fortune Electronics Co., Limited
IXFN120N65X2
IXYSCLARE
7495
1.5575
Wide Key International Limited
IXFN120N65X2
IXYSCORPORATION
2012
2.715
Bonase Electronics (HK) Co., Limited
IXFN120N65X2
IXYS()
7521
3.8725
MY Group (Asia) Limited
IXFN120N65X2
IXYS/LEADIS
8346
5.03
Inchange Semiconductor Company Limited