Part Number | IXFN100N10S2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 100V 100A SOT-227B |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 360W (Tc) |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 500mA, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Image |
IXFN100N10S2
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Dedicate Electronics (HK) Limited
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