Part Number | IXFL82N60P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 600V 55A ISOPLUS 264 |
Series | HiPerFET, PolarHT |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 625W (Tc) |
Rds On (Max) @ Id, Vgs | 78 mOhm @ 41A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ISOPLUS264 |
Package / Case | ISOPLUS264 |
Image |
IXFL82N60P
IXYSRF
1000
0.89
MY Group (Asia) Limited
IXFL82N60P
IXYSCLARE
12783
2.335
HongKong Wanghua Technology Limited
IXFL82N60P
IXYSCORPORATION
200000
3.78
Jealasentec(HK) Semiconductors Co.,Limited
IXFL82N60P
IXYS()
500
5.225
North Star Technology (HK) Co.,Ltd
IXFL82N60P
IXYS/LEADIS
3700
6.67
Sunshine Electronic Components Limited