Part Number | IXFK26N100P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1000V 26A TO-264 |
Series | HiPerFET, PolarP2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 197nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 11900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 780W (Tc) |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264AA (IXFK) |
Package / Case | TO-264-3, TO-264AA |
Image |
IXFK26N100P
IXYSRF
3935
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Ande Electronics Co., Limited
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IXYSCLARE
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1.4925
Bonase Electronics (HK) Co., Limited
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IXYSCORPORATION
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YO CHIP(HONG KONG)TRADING CO LIMITED
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SUNGLOW (HONGKONG) TECHNOLOGY LIMITED