Part Number | IXFK24N100Q3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1000V 24A TO-264 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 6.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7200pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 1000W (Tc) |
Rds On (Max) @ Id, Vgs | 440 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264AA (IXFK) |
Package / Case | TO-264-3, TO-264AA |
Image |
IXFK24N100Q3
IXYSRF
5500
0.83
Dedicate Electronics (HK) Limited
IXFK24N100Q3
IXYSCLARE
12
1.865
Transfer Multisort Elektronik Sp. z o.o.
IXFK24N100Q3
IXYSCORPORATION
500
2.9
North Star Technology (HK) Co.,Ltd
IXFK24N100Q3
IXYS()
2850
3.935
HK KANXINRUI TECHNOLOGY LIMITED
IXFK24N100
IXYS/LEADIS
4129
4.97
Ande Electronics Co., Limited