Part Number | IXFK100N65X2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 650V 100A TO-264 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 11300pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 1040W (Tc) |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264 |
Package / Case | TO-264-3, TO-264AA |
Image |
IXFK100N65X2
IXYSRF
16000
0.58
Finestock Electronics HK Limited
IXFK100N65X2
IXYSCLARE
1864
1.795
HK FEILIDI ELECTRONIC CO., LIMITED
IXFK100N65X2
IXYSCORPORATION
11355
3.01
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
IXFK100N65X2
IXYS()
50
4.225
Xinnlinx Electronics Pte Ltd
IXFK100N65X2
IXYS/LEADIS
5519
5.44
Dedicate Electronics (HK) Limited