Part Number | IXFH18N60P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 600V 18A TO-247 |
Series | HiPerFET, PolarHT |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 360W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) |
Package / Case | TO-247-3 |
Image |
IXFH18N60P
IXYSRF
18650
0.32
Fairstock HK Limited
IXFH18N60P
IXYSCLARE
45797
1.5625
ICBROS TECHNOLOGY LIMITED
IXFH18N60P
IXYSCORPORATION
15500
2.805
Bonase Electronics (HK) Co., Limited
IXFH18N60P
IXYS()
37500
4.0475
Cinty Int'l (HK) Industry Co., Limited
IXFH18N60P
IXYS/LEADIS
5000
5.29
Shenzhen Huaxiong semiconductor (Group) Co.Ltd