Description
IXFH170N10P . IXFK170N10P. PolarTM HiperFETTM. Power MOSFET. N- Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Rectifier. V. DSS. IXFH170N10P . IXFD200N10P-88. 0.0075. IX88. 13.34 x 7.14. 525 x 281. 15 mil x 6. IXFK200N10P. IXFD96N15P-6S. 1. 5. 0. 0.024. IX6S. 6.86 x 6.86. 270 x 270.
Part Number | IXFH170N10P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 100V 170A TO-247 |
Series | HiPerFET, PolarP2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 198nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 715W (Tc) |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) |
Package / Case | TO-247-3 |
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IXFH170N10P
IXYSRF
5000
0.86
G Trader Limited
IXFH170N10P
IXYSCLARE
25
1.765
Hongkong Truly Electronics Tech Co.,Ltd
IXFH170N10P
IXYSCORPORATION
1253
2.67
Xinye International Technology Limited
IXFH170N10P
IXYS()
6745
3.575
CIS Ltd (CHECK IC SOLUTION LIMITED)
IXFH170N10P
IXYS/LEADIS
835
4.48
Lattice International Trading Co., Limited