Part Number | IXFH14N100 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1000V 14A TO-247 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 220nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 360W (Tc) |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) |
Package / Case | TO-247-3 |
Image |
IXFH14N100
IXYSRF
44363
0.92
N&S Electronic Co., Limited
IXFH14N100
IXYSCLARE
16000
2.0475
Finestock Electronics HK Limited
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IXYSCORPORATION
87550
3.175
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IXFH14N100
IXYS()
5625
4.3025
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1254
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