Description
Datasheet DS100202B(04/11). PolarTM HiPerFETTM. Power MOSFET. N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode. IXFA6N120P . IXFP6N120P. Sep 4, 2011 IXFA6N120P . 6. 2.4. 2830. 92. 300. 0.50. 250. X011b. IXFR 16N120P. 9. 1.04. 6900. 120. 300. 0.54. 230. X016a. IXFV 12N120P. 12. 1.35.
Part Number | IXFA6N120P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1200V 6A D2PAK |
Series | HiPerFET, PolarP2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2830pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 2.4 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (IXFA) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IXFA6N120P
IXYSRF
14000
0.82
MY Group (Asia) Limited
IXFA6N120P
IXYSCLARE
500
1.03
North Star Technology (HK) Co.,Ltd