Description
MOSFET N-CH 1000V 4A TO-263 Series: HiPerFET? Amplifier Type: -55°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Number | IXFA4N100Q |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 1000V 4A TO-263 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (IXFA) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IXFA4N100Q
IXYSRF
16000
0.28
Finestock Electronics HK Limited
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IXYSCLARE
1145
0.9475
Xinye International Technology Limited
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IXYSCORPORATION
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HK HEQING ELECTRONICS LIMITED
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IXYS()
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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Cicotex Electronics (HK) Limited