Part Number | IXFA22N65X2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 650V 22A TO-263 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2310pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 390W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IXFA22N65X2
IXYSRF
1200
1.81
HK FEILIDI ELECTRONIC CO., LIMITED
IXFA22N65X2
IXYSCLARE
16660
3.0925
LvangChip(HongKong)Co.,Limited
IXFA22N65X2
IXYSCORPORATION
5000
4.375
Yingxinyuan INT'L (Group) Limited
IXFA22N65X2
IXYS()
1330
5.6575
INSO (INCREDIBLE SOLUTION) HK LIMITED
IXFA22N65X2
IXYS/LEADIS
37500
6.94
Cinty Int'l (HK) Industry Co., Limited