Description
IXEN60N120 . IRM trr. A ns. VCE = 600 V. IC. = 50 A. TVJ = 125 C. VR. = 600 V. IF. = 60 A. 13 V. 15 V. VGE = 17 V. Fig. 1 Typ. output characteristics. Fig.
Part Number | IXEN60N120 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | IXYS |
Description | IGBT NPT3 1200V 100A SOT-227B |
Series | - |
IGBT Type | NPT |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 100A |
Power - Max | 445W |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 60A |
Current - Collector Cutoff (Max) | 800µA |
Input Capacitance (Cies) @ Vce | 3.8nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Supplier Device Package | SOT-227B |
Image |
IXEN60N120
IXYSRF
30000
1.74
KOLLTIEN TECHNOLOGY CO., LIMITED
IXEN60N120
IXYSCLARE
8000
2.5775
MY Group (Asia) Limited
IXEN60N120
IXYSCORPORATION
30000
3.415
Hong Kong Fly Bird Technology Limited
IXEN60N120
IXYS()
16000
4.2525
Finestock Electronics HK Limited
IXEN60N120
IXYS/LEADIS
328
5.09
HL Electronics (Hong Kong) Co.,Ltd