Part Number | IXBT20N360HV |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | IXYS |
Description | IGBT 3600V 70A TO-268HV |
Series | BIMOSFET |
Packaging | - |
IGBT Type | Tube |
Voltage - Collector Emitter Breakdown (Max) | 3600V |
Current - Collector (Ic) (Max) | 70A |
Current - Collector Pulsed (Icm) | 220A |
Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
Power - Max | 430W |
Switching Energy | 15.5mJ (on), 4.3mJ (off) |
Input Type | Standard |
Gate Charge | 110nC |
Td (on/off) @ 25°C | 18ns/238ns |
Test Condition | 1500V, 20A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 1.7µs |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, Dé²ÂPak (2 Leads + Tab), TO-268AA |
Supplier Device Package | TO-268 |
Image |
IXBT20N360HV
IXYSRF
7953
1.74
Hong Kong In Fortune Electronics Co., Limited
IXBT20N360HV
IXYSCLARE
9675
2.6625
Wide Key International Limited
IXBT20N360HV
IXYSCORPORATION
5063
3.585
Bonase Electronics (HK) Co., Limited
IXBT20N360HV
IXYS()
9195
4.5075
MY Group (Asia) Limited
IXBT20N360HV
IXYS/LEADIS
537
5.43
Inchange Semiconductor Company Limited