Description
Nov 1, 2013 1. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQPF9N25C / FQPF9N25CT. Jul 14, 2015 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQPF9N25C . FQPF9N25C . TO220F-3. Jul 14, 2015. Jul 14, 2015 FQPF9N25C . TO220F-3. FSSZ. FSSZ. 2.11234. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp.
Part Number | FQPF9N25C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 250V 8.8A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF9N25C
IXYSRF
180
0.94
SUNTOP SEMICONDUCTOR CO., LIMITED
FQPF9N25C
IXYSCLARE
14000
1.9175
MY Group (Asia) Limited
FQPF9N25C
IXYSCORPORATION
9000
2.895
SUMMER TECH(HK) LIMITED
FQPF9N25C
IXYS()
1500
3.8725
Cicotex Electronics (HK) Limited
FQPF9N25C
IXYS/LEADIS
30000
4.85
IC Direct Technology Limited