Description
MOSFET 2N-CH 200V 33A I4-PAC Series: HiPerFET? FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25~C: 33A Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250米A Gate Charge (Qg) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) @ Vds: 3700pF @ 25V Power - Max: 125W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?
Part Number | FMM60-02TF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | IXYS |
Description | MOSFET 2N-CH 200V 33A I4-PAC |
Series | HiPerFET |
Packaging | 2 N-Channel (Dual) |
FET Type | Tube |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 33A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
Power - Max | 125W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | i4-Pac,5 |
Supplier Device Package | ISOPLUS i4-PAC |
Image |
FMM60-02TF
IXYSRF
500
0.69
North Star Technology (HK) Co.,Ltd