Part Number | APT29F80J |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | IXYS |
Description | MOSFET N-CH 800V 31A SOT-227 |
Series | POWER MOS 8 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 31A |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 303nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9326pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 543W (Tc) |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 24A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | ISOTOP |
Package / Case | SOT-227-4, miniBLOC |
Image |
APT29F80J
IXYSRF
50
0.72
Wanzhong Mechanical & Electrical Equipment (China HK) Limited
APT29F80J
IXYSCLARE
18000
1.67
HK Niuhuasi Technology Limited
APT29F80J
IXYSCORPORATION
1000
2.62
Bonase Electronics (HK) Co., Limited
APT29F80J
IXYS()
5406
3.57
Hong Kong Maoshuo Electronics Co.,Limited
APT29F80J
IXYS/LEADIS
5406
4.52
Hong Kong Maoshuo Electronics Co.,Limited